N-channel transistor IXTQ460P2, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

N-channel transistor IXTQ460P2, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V

Quantity
Unit price
1-4
8.46$
5-14
7.71$
15-29
7.22$
30-59
6.81$
60+
6.06$
Equivalence available
Quantity in stock: 38

N-channel transistor IXTQ460P2, 12A, 24A, 200uA, 270 milliOhms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. On-resistance Rds On: 270 milliOhms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2890pF. Channel type: N. Cost): 280pF. Drain-source protection: yes. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 50A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 480W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTQ460P2
30 parameters
ID (T=100°C)
12A
ID (T=25°C)
24A
Idss (max)
200uA
On-resistance Rds On
270 milliOhms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
2890pF
Channel type
N
Cost)
280pF
Drain-source protection
yes
Function
N-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
25uA
Id(imp)
50A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
480W
Quantity per case
1
RoHS
yes
Td(off)
30 ns
Td(on)
15 ns
Technology
PolarP2TM Power MOSFET
Trr Diode (Min.)
400 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
2.5V
Original product from manufacturer
IXYS

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