N-channel transistor IXTP90N055T2, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V

N-channel transistor IXTP90N055T2, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V

Quantity
Unit price
1-4
3.74$
5-24
3.26$
25-49
2.85$
50-99
2.52$
100+
2.07$
Equivalence available
Quantity in stock: 40

N-channel transistor IXTP90N055T2, 75A, 90A, 200uA, 0.07 Ohms, TO-220, TO-220, 55V. Ic(T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 200uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 2770pF. Channel type: N. Cost): 420pF. Drain-source protection: yes. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 2uA. Id(imp): 240A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTP90N055T2
30 parameters
Ic(T=100°C)
75A
ID (T=25°C)
90A
Idss (max)
200uA
On-resistance Rds On
0.07 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
2770pF
Channel type
N
Cost)
420pF
Drain-source protection
yes
Function
N-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
2uA
Id(imp)
240A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Td(off)
39 ns
Td(on)
19 ns
Technology
TrenchT2TM Power MOSFET
Trr Diode (Min.)
37 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
IXYS

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