N-channel transistor IXTP50N25T, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V

N-channel transistor IXTP50N25T, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V

Quantity
Unit price
1-4
10.06$
5-9
8.75$
10-24
7.81$
25-49
7.03$
50+
5.82$
Equivalence available
Quantity in stock: 26

N-channel transistor IXTP50N25T, 50A, 150uA, 92 Ohms, TO-220, TO-220, 300V. ID (T=25°C): 50A. Idss (max): 150uA. On-resistance Rds On: 92 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 300V. Assembly/installation: PCB through-hole mounting. C(in): 4000pF. Channel type: N. Cost): 420pF. Drain-source protection: yes. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 130A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTP50N25T
29 parameters
ID (T=25°C)
50A
Idss (max)
150uA
On-resistance Rds On
92 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
300V
Assembly/installation
PCB through-hole mounting
C(in)
4000pF
Channel type
N
Cost)
420pF
Drain-source protection
yes
Function
N-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
130A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
300W
Quantity per case
1
RoHS
yes
Td(off)
97 ns
Td(on)
24 ns
Technology
PolarHT Power MOSFET
Trr Diode (Min.)
250 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
IXYS

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