N-channel transistor IXTH96N20P, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V

N-channel transistor IXTH96N20P, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V

Quantity
Unit price
1-4
11.75$
5-9
10.88$
10-19
10.23$
20+
9.59$
Quantity in stock: 5

N-channel transistor IXTH96N20P, 75A, 96A, 250uA, 24m Ohms, TO-247, TO-247, 200V. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. On-resistance Rds On: 24m Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 4800pF. Channel type: N. Cost): 1020pF. Drain-source protection: diode. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 225A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 600W. Quantity per case: 1. RoHS: yes. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.5V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXTH96N20P
29 parameters
ID (T=100°C)
75A
ID (T=25°C)
96A
Idss (max)
250uA
On-resistance Rds On
24m Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
4800pF
Channel type
N
Cost)
1020pF
Drain-source protection
diode
Function
N-Channel Enhancement Mode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
225A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
600W
Quantity per case
1
RoHS
yes
Td(off)
75 ns
Td(on)
28 ns
Technology
PolarHT Power MOSFET
Trr Diode (Min.)
160 ns
Type of transistor
MOSFET
Vgs(th) min.
2.5V
Original product from manufacturer
IXYS