N-channel transistor IXTA36N30P, 36A, 200uA, 0.092 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263AB ), 300V. ID (T=25°C): 36A. Idss (max): 200uA. On-resistance Rds On: 0.092 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Voltage Vds(max): 300V. Assembly/installation: surface-mounted component (SMD). C(in): 2250pF. Channel type: N. Cost): 370pF. Drain-source protection: diode. Function: N-Channel Enhancement Mode. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 90A. Number of terminals: 2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04