N-channel transistor IXGR60N60C3D1, 30A, TO-247, TO-247AC, 600V

N-channel transistor IXGR60N60C3D1, 30A, TO-247, TO-247AC, 600V

Quantity
Unit price
1-4
11.28$
5-9
10.97$
10-24
10.69$
25+
10.41$
Quantity in stock: 36

N-channel transistor IXGR60N60C3D1, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2113pF. CE diode: yes. Channel type: N. Collector current: 75A. Conditioning unit: 25. Conditioning: plastic tube. Cost): 197pF. Function: IGBT With Ultrafast Soft Recovery Diode. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 260A. Maximum saturation voltage VCE(sat): 1.9V. Note: insulation 2500V (50/60Hz RMS, t=1minute). Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 268W. RoHS: yes. Saturation voltage VCE(sat): 1.6V. Td(off): 127 ns. Td(on): 43 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 08:13

IXGR60N60C3D1
28 parameters
Ic(T=100°C)
30A
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
2113pF
CE diode
yes
Channel type
N
Collector current
75A
Conditioning unit
25
Conditioning
plastic tube
Cost)
197pF
Function
IGBT With Ultrafast Soft Recovery Diode
Gate/emitter voltage VGE(th) min.
4 v
Gate/emitter voltage VGE(th)max.
6.5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
260A
Maximum saturation voltage VCE(sat)
1.9V
Note
insulation 2500V (50/60Hz RMS, t=1minute)
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
268W
RoHS
yes
Saturation voltage VCE(sat)
1.6V
Td(off)
127 ns
Td(on)
43 ns
Original product from manufacturer
IXYS