N-channel transistor IXGR60N60C2, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V

N-channel transistor IXGR60N60C2, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V

Quantity
Unit price
1-4
13.41$
5-9
12.66$
10-24
11.02$
25+
10.07$
Quantity in stock: 48

N-channel transistor IXGR60N60C2, 48A, ISOPLUS247 ( TO-247 ), ISOPLUS247, 600V. Ic(T=100°C): 48A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 3900pF. CE diode: no. Channel type: N. Collector current: 75A. Cost): 280pF. Function: C2-Class High Speed IGBT. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 300A. Maximum saturation voltage VCE(sat): 2.7V. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 250W. RoHS: yes. Saturation voltage VCE(sat): 2.3V. Spec info: ICM TC=25°C, 1ms 300A. Td(off): 95 ns. Td(on): 18 ns. Trr Diode (Min.): 35ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57

Technical documentation (PDF)
IXGR60N60C2
28 parameters
Ic(T=100°C)
48A
Housing
ISOPLUS247 ( TO-247 )
Housing (according to data sheet)
ISOPLUS247
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
3900pF
CE diode
no
Channel type
N
Collector current
75A
Cost)
280pF
Function
C2-Class High Speed IGBT
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
300A
Maximum saturation voltage VCE(sat)
2.7V
Note
HiPerFAST IGBT transistor
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
250W
RoHS
yes
Saturation voltage VCE(sat)
2.3V
Spec info
ICM TC=25°C, 1ms 300A
Td(off)
95 ns
Td(on)
18 ns
Trr Diode (Min.)
35ns
Original product from manufacturer
IXYS