N-channel transistor IXGR48N60C3D1, 27A, TO-247, TO-247 ( AC ), 600V

N-channel transistor IXGR48N60C3D1, 27A, TO-247, TO-247 ( AC ), 600V

Quantity
Unit price
1-4
17.46$
5-14
16.18$
15-29
15.25$
30-59
14.45$
60+
13.59$
Quantity in stock: 17

N-channel transistor IXGR48N60C3D1, 27A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 27A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1960pF. CE diode: yes. Channel type: N. Collector current: 56A. Conditioning unit: 30. Conditioning: plastic tube. Cost): 220pF. Function: High Speed ​​PT IGBTs for 40-100kHz Switching. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 230A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Saturation voltage VCE(sat): 2.3V. Spec info: Electrically Isolated Back Surface. Td(off): 92 ns. Td(on): 19 ns. Trr Diode (Min.): 25 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57

Technical documentation (PDF)
IXGR48N60C3D1
27 parameters
Ic(T=100°C)
27A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AC )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
1960pF
CE diode
yes
Channel type
N
Collector current
56A
Conditioning unit
30
Conditioning
plastic tube
Cost)
220pF
Function
High Speed ​​PT IGBTs for 40-100kHz Switching
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
230A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
RoHS
yes
Saturation voltage VCE(sat)
2.3V
Spec info
Electrically Isolated Back Surface
Td(off)
92 ns
Td(on)
19 ns
Trr Diode (Min.)
25 ns
Original product from manufacturer
IXYS