N-channel transistor IXGH32N60BU1, 32A, TO-247, TO-247 ( AD ) HiPerFAST IGBT, 600V. Ic(T=100°C): 32A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2700pF. CE diode: yes. Channel type: N. Collector current: 60A. Cost): 270pF. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 20V. Germanium diode: -. Ic(pulse): 60.4k Ohms. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 2.3V. Td(off): 100 ns. Td(on): 25 ns. Trr Diode (Min.): 120ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57