N-channel transistor IXGH24N60CD1, 24A, TO-247, TO-247 ( AD ), 600V

N-channel transistor IXGH24N60CD1, 24A, TO-247, TO-247 ( AD ), 600V

Quantity
Unit price
1-4
12.62$
5-24
11.68$
25-49
10.24$
50+
9.48$
Quantity in stock: 34

N-channel transistor IXGH24N60CD1, 24A, TO-247, TO-247 ( AD ), 600V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. CE diode: yes. Channel type: N. Collector current: 48A. Cost): 170pF. Function: HiPerFAST IGBT with Diode. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 80A. Maximum saturation voltage VCE(sat): 2.5V. Note: HiPerFAST IGBT transistor. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 150W. Saturation voltage VCE(sat): 2.1V. Td(off): 75 ns. Td(on): 15 ns. Trr Diode (Min.): 130 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 06:57

Technical documentation (PDF)
IXGH24N60CD1
26 parameters
Ic(T=100°C)
24A
Housing
TO-247
Housing (according to data sheet)
TO-247 ( AD )
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
1500pF
CE diode
yes
Channel type
N
Collector current
48A
Cost)
170pF
Function
HiPerFAST IGBT with Diode
Gate/emitter voltage VGE(th) min.
2.5V
Gate/emitter voltage VGE(th)max.
5.5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
80A
Maximum saturation voltage VCE(sat)
2.5V
Note
HiPerFAST IGBT transistor
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
150W
Saturation voltage VCE(sat)
2.1V
Td(off)
75 ns
Td(on)
15 ns
Trr Diode (Min.)
130 ns
Original product from manufacturer
IXYS