N-channel transistor IXFX34N80, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V

N-channel transistor IXFX34N80, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V

Quantity
Unit price
1-4
28.48$
5-9
27.38$
10-24
25.03$
25+
23.41$
Equivalence available
Quantity in stock: 25

N-channel transistor IXFX34N80, 34A, 2mA, 0.24 Ohms, PLUS247, PLUS-247 (TO247 without fixing hole), 800V. ID (T=25°C): 34A. Idss (max): 2mA. On-resistance Rds On: 0.24 Ohms. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 7500pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 920pF. Drain-source protection: diode. Function: -. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 136A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 560W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 5V/ns. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04

Technical documentation (PDF)
IXFX34N80
30 parameters
ID (T=25°C)
34A
Idss (max)
2mA
On-resistance Rds On
0.24 Ohms
Housing
PLUS247
Housing (according to data sheet)
PLUS-247 (TO247 without fixing hole)
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
7500pF
Channel type
N
Conditioning unit
30
Conditioning
plastic tube
Cost)
920pF
Drain-source protection
diode
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
100uA
Id(imp)
136A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
560W
Quantity per case
1
RoHS
yes
Spec info
dv/dt 5V/ns
Td(off)
100 ns
Td(on)
45 ns
Technology
HiPerFet Power MOSFET
Trr Diode (Min.)
250 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
IXYS

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