N-channel transistor IXFK64N50P, TO-264 ( TOP-3L ), 500V, 64A, 1mA, 85m Ohms, TO-264AA, 500V. Housing: TO-264 ( TOP-3L ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. ID (T=25°C): 64A. Idss (max): 1mA. On-resistance Rds On: 85m Ohms. Housing (according to data sheet): TO-264AA. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 7900pF. Channel type: N. Ciss Gate Capacitance [pF]: 9700pF. Component family: MOSFET, N-MOS. Conditioning unit: 25. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 790pF. Drain current Id (A) @ 25°C: 64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.085 Ohms @ 32A. Drain-source protection: diode. G-S Protection: no. Gate breakdown voltage Ugs [V]: 5.5V. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 150A. Manufacturer's marking: IXFK64N50P. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 830W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 830W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 20V/ns. Switch-off delay tf[nsec.]: 85 ns. Switch-on time ton [nsec.]: 30 ns. Td(off): 85 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04