N-channel transistor IXFK44N80P, TO-264 ( TOP-3L ), 800V, 44A, 1.5mA, 0.19 Ohms, TO-264AA, 800V. Housing: TO-264 ( TOP-3L ). Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 800V. ID (T=25°C): 44A. Idss (max): 1.5mA. On-resistance Rds On: 0.19 Ohms. Housing (according to data sheet): TO-264AA. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 12pF. Channel type: N. Ciss Gate Capacitance [pF]: 12000pF. Component family: MOSFET, N-MOS. Conditioning unit: 25. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 910pF. Drain current Id (A) @ 25°C: 44A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.19 Ohms @ 22A. Drain-source protection: diode. Function: Enhancement Mode, Avalanche Rated. G-S Protection: no. Gate breakdown voltage Ugs [V]: 5V. Gate/source voltage Vgs: 30 v. IDss (min): 50uA. Id(imp): 100A. Manufacturer's marking: IXFK44N80P. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1200W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1200W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 10V/ns. Switch-off delay tf[nsec.]: 75 ns. Switch-on time ton [nsec.]: 28 ns. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHVTM HiPerFET Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04