N-channel transistor IXFH58N20, TO-247AD, 200V. Housing: TO-247AD. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 4400pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 58A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 29A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: IXFH58N20. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 300W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 90 ns. Switch-on time ton [nsec.]: 25 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/02/2025, 19:14