N-channel transistor IXFH26N60Q, 26A, 1mA, 0.25 Ohms, TO-247, TO-247AD, 600V. ID (T=25°C): 26A. Idss (max): 1mA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AD. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 4700pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 580pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 104A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 360W. Quantity per case: 1. RoHS: yes. Spec info: dv/dt 10V/ns. Td(off): 80 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.5V. Original product from manufacturer: IXYS. Quantity in stock updated on 10/31/2025, 07:04