N-channel transistor IXFH13N80, TO-247AD, 800V
Quantity
Unit price
1+
37.40$
| Quantity in stock: 33 |
N-channel transistor IXFH13N80, TO-247AD, 800V. Housing: TO-247AD. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 800V. Ciss Gate Capacitance [pF]: 4200pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 13A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.8 Ohms @ 6.5A. Gate breakdown voltage Ugs [V]: 4.5V. Manufacturer's marking: IXFH13N80. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 300W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 63 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: IXYS. Quantity in stock updated on 11/02/2025, 23:16
IXFH13N80
16 parameters
Housing
TO-247AD
Drain-source voltage Uds [V]
800V
Ciss Gate Capacitance [pF]
4200pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Drain current Id (A) @ 25°C
13A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.8 Ohms @ 6.5A
Gate breakdown voltage Ugs [V]
4.5V
Manufacturer's marking
IXFH13N80
Max temperature
+150°C.
Maximum dissipation Ptot [W]
300W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
63 ns
Switch-on time ton [nsec.]
20 ns
Original product from manufacturer
IXYS