N-channel transistor IRLZ24NPBF, TO220AB, 55V, 55V. Housing: TO220AB. Vdss (Drain to Source Voltage): 55V. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Assembly/installation: THT. Charge: 10nC. Ciss Gate Capacitance [pF]: 480pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 18A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 11A. Drain current: 18A. Drain-source voltage: 55V. Features: -. Gate breakdown voltage Ugs [V]: 2V. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 3.3K/W. Id @ Tc=25°C (Continuous Drain Current): 18A. Information: -. MSL: -. Manufacturer's marking: IRLZ24NPBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 45W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Polarity: unipolar. Power: 45W. Properties of semiconductor: Logic Level. RoHS: no. Series: HEXFET. Switch-off delay tf[nsec.]: 20 ns. Switch-on time ton [nsec.]: 7.1 ns. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET, logic level. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 17:57