N-channel transistor IRLZ24N, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V

N-channel transistor IRLZ24N, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V

Quantity
Unit price
1-4
1.00$
5-24
0.86$
25-49
0.76$
50-99
0.68$
100+
0.59$
Quantity in stock: 181

N-channel transistor IRLZ24N, 8.5A, 17A, 250uA, 0.075 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 8.5A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 480pF. Channel type: N. Cost): 130pF. Drain-source protection: yes. Function: Gate control by logic level. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Pd (Power Dissipation, Max): 47W. Quantity per case: 1. Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLZ24N
26 parameters
ID (T=100°C)
8.5A
ID (T=25°C)
17A
Idss (max)
250uA
On-resistance Rds On
0.075 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
480pF
Channel type
N
Cost)
130pF
Drain-source protection
yes
Function
Gate control by logic level
G-S Protection
no
Gate/source voltage Vgs
16V
IDss (min)
25uA
Pd (Power Dissipation, Max)
47W
Quantity per case
1
Td(off)
20 ns
Td(on)
7.1 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
60 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier