N-channel transistor IRLR8726TRPBF, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

N-channel transistor IRLR8726TRPBF, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

Quantity
Unit price
1-1
0.56$
2-4
0.46$
5-49
0.40$
50-99
0.36$
100+
0.32$
Quantity in stock: 178

N-channel transistor IRLR8726TRPBF, 61A, 86A, 150uA, 4m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 61A. ID (T=25°C): 86A. Idss (max): 150uA. On-resistance Rds On: 4m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 2150pF. Channel type: N. Cost): 480pF. Drain-source protection: yes. Equivalents: IRLR8726PBF, IRLR8726TRLPBF. Function: Very low RDS on-resistance at 4.5V VGS. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 340A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Spec info: Ultra-Low Gate Impedance. Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

IRLR8726TRPBF
32 parameters
ID (T=100°C)
61A
ID (T=25°C)
86A
Idss (max)
150uA
On-resistance Rds On
4m Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
2150pF
Channel type
N
Cost)
480pF
Drain-source protection
yes
Equivalents
IRLR8726PBF, IRLR8726TRLPBF
Function
Very low RDS on-resistance at 4.5V VGS
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
340A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
75W
Quantity per case
1
RoHS
yes
Spec info
Ultra-Low Gate Impedance
Td(off)
15 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
24 ns
Type of transistor
MOSFET
Vgs(th) max.
2.35V
Vgs(th) min.
1.35V
Original product from manufacturer
International Rectifier