N-channel transistor IRLR8721, 46A, 65A, 150uA, 6.3m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

N-channel transistor IRLR8721, 46A, 65A, 150uA, 6.3m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

Quantity
Unit price
1-1
1.15$
2-4
1.15$
5-49
0.95$
50-99
0.81$
100+
0.68$
Quantity in stock: 24

N-channel transistor IRLR8721, 46A, 65A, 150uA, 6.3m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 150uA. On-resistance Rds On: 6.3m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 1030pF. Channel type: N. Cost): 350pF. Drain-source protection: yes. Function: Very low RDS on-resistance at 4.5V VGS. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 260A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 65W. Quantity per case: 1. RoHS: yes. Spec info: Ultra-Low Gate Impedance. Td(off): 9.4 ns. Td(on): 8.8 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR8721
31 parameters
ID (T=100°C)
46A
ID (T=25°C)
65A
Idss (max)
150uA
On-resistance Rds On
6.3m Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
1030pF
Channel type
N
Cost)
350pF
Drain-source protection
yes
Function
Very low RDS on-resistance at 4.5V VGS
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
260A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
65W
Quantity per case
1
RoHS
yes
Spec info
Ultra-Low Gate Impedance
Td(off)
9.4 ns
Td(on)
8.8 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
17 ns
Type of transistor
MOSFET
Vgs(th) max.
2.35V
Vgs(th) min.
1.35V
Original product from manufacturer
International Rectifier