N-channel transistor IRLR7843, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

N-channel transistor IRLR7843, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v

Quantity
Unit price
1-4
1.36$
5-24
1.13$
25-49
1.02$
50+
0.92$
Equivalence available
Quantity in stock: 1592

N-channel transistor IRLR7843, 113A, 161A, 150uA, 2.6m Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 113A. ID (T=25°C): 161A. Idss (max): 150uA. On-resistance Rds On: 2.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. Assembly/installation: surface-mounted component (SMD). C(in): 4380pF. Channel type: N. Conditioning unit: 2000. Conditioning: roll. Cost): 940pF. Drain-source protection: zener diode. Function: Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 620A. Marking on the case: LR7843. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 140W. Quantity per case: 1. RoHS: yes. Td(off): 34 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 39 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR7843
33 parameters
ID (T=100°C)
113A
ID (T=25°C)
161A
Idss (max)
150uA
On-resistance Rds On
2.6m Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
30 v
Assembly/installation
surface-mounted component (SMD)
C(in)
4380pF
Channel type
N
Conditioning unit
2000
Conditioning
roll
Cost)
940pF
Drain-source protection
zener diode
Function
Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
620A
Marking on the case
LR7843
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
140W
Quantity per case
1
RoHS
yes
Td(off)
34 ns
Td(on)
25 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
39 ns
Type of transistor
MOSFET
Vgs(th) max.
2.3V
Vgs(th) min.
1.5V
Original product from manufacturer
International Rectifier

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