N-channel transistor IRLR3110ZPBF, 45A, 42A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

N-channel transistor IRLR3110ZPBF, 45A, 42A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

Quantity
Unit price
1-4
2.26$
5-49
1.89$
50-99
1.61$
100-199
1.36$
200+
1.04$
Quantity in stock: 2249

N-channel transistor IRLR3110ZPBF, 45A, 42A, 250uA, 0.105 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 45A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.105 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 3980pF. Channel type: N. Cost): 170pF. Drain-source protection: yes. Equivalents: IRLR3110ZPbF. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Gate/source voltage Vgs: ±16. IDss (min): 25uA. Id(imp): 250A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 79W. Quantity per case: 1. RoHS: yes. Spec info: Ultra Low On-Resistance. Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 34-51 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

IRLR3110ZPBF
32 parameters
ID (T=100°C)
45A
ID (T=25°C)
42A
Idss (max)
250uA
On-resistance Rds On
0.105 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
3980pF
Channel type
N
Cost)
170pF
Drain-source protection
yes
Equivalents
IRLR3110ZPbF
Function
Ultra Low On-Resistance, Fast Switching
G-S Protection
no
Gate/source voltage Vgs
±16
IDss (min)
25uA
Id(imp)
250A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
79W
Quantity per case
1
RoHS
yes
Spec info
Ultra Low On-Resistance
Td(off)
30 ns
Td(on)
7.2 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
34-51 ns
Type of transistor
MOSFET
Vgs(th) max.
2.5V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier