N-channel transistor IRLR2905Z, D-PAK ( TO-252 ), 43A, 42A, 250uA, 11m Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

N-channel transistor IRLR2905Z, D-PAK ( TO-252 ), 43A, 42A, 250uA, 11m Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

Quantity
Unit price
1-4
1.69$
5-49
1.43$
50-99
1.27$
100-199
1.14$
200+
0.97$
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N-channel transistor IRLR2905Z, D-PAK ( TO-252 ), 43A, 42A, 250uA, 11m Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V. Housing: D-PAK ( TO-252 ). ID (T=100°C): 43A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 11m Ohms. Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 1570pF. Channel type: N. Charge: 23nC. Cost): 230pF. Drain current: 60A. Drain-source protection: yes. Drain-source voltage: 55V. Equivalents: IRLR2905ZTRPBF. Function: Gate control by logic level. G-S Protection: no. Gate-source voltage: ±16V. Gate/source voltage Vgs: 16V. IDss (min): 20uA. Id(imp): 240A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 110W. Polarity: unipolar. Power: 110W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Spec info: AUTOMOTIVE MOSFET. Td(off): 24 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 22ms. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR2905Z
39 parameters
Housing
D-PAK ( TO-252 )
ID (T=100°C)
43A
ID (T=25°C)
42A
Idss (max)
250uA
On-resistance Rds On
11m Ohms
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
1570pF
Channel type
N
Charge
23nC
Cost)
230pF
Drain current
60A
Drain-source protection
yes
Drain-source voltage
55V
Equivalents
IRLR2905ZTRPBF
Function
Gate control by logic level
G-S Protection
no
Gate-source voltage
±16V
Gate/source voltage Vgs
16V
IDss (min)
20uA
Id(imp)
240A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
110W
Polarity
unipolar
Power
110W
Properties of semiconductor
Logic Level
Quantity per case
1
RoHS
yes
Spec info
AUTOMOTIVE MOSFET
Td(off)
24 ns
Td(on)
14 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
22ms
Type of transistor
MOSFET
Vgs(th) max.
3V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier

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