N-channel transistor IRLR2905, D-PAK ( TO-252 ), 30A, 42A, 250uA, 0.027 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

N-channel transistor IRLR2905, D-PAK ( TO-252 ), 30A, 42A, 250uA, 0.027 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V

Quantity
Unit price
1-4
1.11$
5-49
0.94$
50-99
0.82$
100-199
0.73$
200+
0.61$
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N-channel transistor IRLR2905, D-PAK ( TO-252 ), 30A, 42A, 250uA, 0.027 Ohms, TO-252AA ( DPAK ) ( SOT428 ), 55V. Housing: D-PAK ( TO-252 ). ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. On-resistance Rds On: 0.027 Ohms. Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 1700pF. Channel type: N. Charge: 32nC. Conditioning unit: 2000. Conditioning: roll. Cost): 400pF. Drain current: 42A. Drain-source protection: yes. Drain-source voltage: 55V. Function: Ultra Low On-Resistance, Fast Switching. G-S Protection: no. Gate-source voltage: 16V, ±16V. Gate/source voltage Vgs: 16V. Housing thermal resistance: 1.8K/W. IDss (min): 25uA. Id(imp): 160A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 110W. Polarity: unipolar. Power: 110W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Spec info: Gate control by logic level. Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR2905
41 parameters
Housing
D-PAK ( TO-252 )
ID (T=100°C)
30A
ID (T=25°C)
42A
Idss (max)
250uA
On-resistance Rds On
0.027 Ohms
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
1700pF
Channel type
N
Charge
32nC
Conditioning unit
2000
Conditioning
roll
Cost)
400pF
Drain current
42A
Drain-source protection
yes
Drain-source voltage
55V
Function
Ultra Low On-Resistance, Fast Switching
G-S Protection
no
Gate-source voltage
16V, ±16V
Gate/source voltage Vgs
16V
Housing thermal resistance
1.8K/W
IDss (min)
25uA
Id(imp)
160A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
110W
Polarity
unipolar
Power
110W
Properties of semiconductor
Logic Level
Quantity per case
1
RoHS
yes
Spec info
Gate control by logic level
Td(off)
26 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
80 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier