N-channel transistor IRLR2705PBF, TO252AA, DPAK
Quantity
Unit price
1-4
1.42$
5-9
0.89$
10-19
0.75$
20-49
0.68$
50+
0.62$
| Quantity in stock: 50 |
N-channel transistor IRLR2705PBF, TO252AA, DPAK. Housing: TO252AA, DPAK. Assembly/installation: SMD. Charge: 16.7nC. Drain current: 28A. Drain-source voltage: 55V. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 2.7K/W. Polarity: unipolar. Power: 68W. Properties of semiconductor: Logic Level. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET, logic level. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 12/21/2025, 19:02
IRLR2705PBF
14 parameters
Housing
TO252AA, DPAK
Assembly/installation
SMD
Charge
16.7nC
Drain current
28A
Drain-source voltage
55V
Gate-source voltage
16V, ±16V
Housing thermal resistance
2.7K/W
Polarity
unipolar
Power
68W
Properties of semiconductor
Logic Level
RoHS
yes
Technology
HEXFET®
Type of transistor
N-MOSFET, HEXFET, logic level
Original product from manufacturer
Infineon (irf)