N-channel transistor IRLR2705PBF, TO252AA, DPAK. Housing: TO252AA, DPAK. Assembly/installation: SMD. Charge: 16.7nC. Drain current: 28A. Drain-source voltage: 55V. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 2.7K/W. Polarity: unipolar. Power: 68W. Properties of semiconductor: Logic Level. RoHS: yes. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET, logic level. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 11/01/2025, 20:31