N-channel transistor IRLR2705, 20A, 28A, 250uA, 0.04 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V

N-channel transistor IRLR2705, 20A, 28A, 250uA, 0.04 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V

Quantity
Unit price
1-4
0.96$
5-24
0.78$
25-49
0.68$
50-99
0.62$
100+
0.52$
Quantity in stock: 15

N-channel transistor IRLR2705, 20A, 28A, 250uA, 0.04 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.04 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 880pF. Channel type: N. Conditioning unit: 75. Conditioning: plastic tube. Cost): 220pF. Drain-source protection: zener diode. Function: Logic-Level Gate Drive, Fast Switching. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 68W. Quantity per case: 1. RoHS: yes. Spec info: low resistance R-on 0.040 Ohms. Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR2705
33 parameters
ID (T=100°C)
20A
ID (T=25°C)
28A
Idss (max)
250uA
On-resistance Rds On
0.04 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
880pF
Channel type
N
Conditioning unit
75
Conditioning
plastic tube
Cost)
220pF
Drain-source protection
zener diode
Function
Logic-Level Gate Drive, Fast Switching
G-S Protection
no
Gate/source voltage Vgs
16V
IDss (min)
25uA
Id(imp)
110A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
68W
Quantity per case
1
RoHS
yes
Spec info
low resistance R-on 0.040 Ohms
Td(off)
21 ns
Td(on)
8.9 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
76 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier