N-channel transistor IRLR120N, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

N-channel transistor IRLR120N, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V

Quantity
Unit price
1-4
1.01$
5-24
0.87$
25-49
0.77$
50-99
0.69$
100+
0.58$
Quantity in stock: 64

N-channel transistor IRLR120N, 7A, 10A, 250uA, 0.185 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 100V. ID (T=100°C): 7A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.185 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 440pF. Channel type: N. Cost): 97pF. Drain-source protection: zener diode. Equivalents: IRLR120NTRPBF. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 35A. Number of terminals: 2. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Spec info: Gate control by logic level. Td(off): 23 ns. Td(on): 4 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLR120N
32 parameters
ID (T=100°C)
7A
ID (T=25°C)
10A
Idss (max)
250uA
On-resistance Rds On
0.185 Ohms
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
100V
Assembly/installation
surface-mounted component (SMD)
C(in)
440pF
Channel type
N
Cost)
97pF
Drain-source protection
zener diode
Equivalents
IRLR120NTRPBF
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
16V
IDss (min)
25uA
Id(imp)
35A
Number of terminals
2
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
48W
Quantity per case
1
RoHS
yes
Spec info
Gate control by logic level
Td(off)
23 ns
Td(on)
4 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
110 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier