N-channel transistor IRLML2502, SOT-23 ( TO-236 ), 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236AB ) ( Micro3 ), 20V

N-channel transistor IRLML2502, SOT-23 ( TO-236 ), 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236AB ) ( Micro3 ), 20V

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Unit price
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100+
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Quantity in stock: 1318

N-channel transistor IRLML2502, SOT-23 ( TO-236 ), 3.4A, 4.2A, 25uA, 0.035 Ohms, SOT-23 ( TO-236AB ) ( Micro3 ), 20V. Housing: SOT-23 ( TO-236 ). ID (T=100°C): 3.4A. ID (T=25°C): 4.2A. Idss (max): 25uA. On-resistance Rds On: 0.035 Ohms. Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. Assembly/installation: surface-mounted component (SMD). C(in): 740pF. Channel type: N. Conditioning unit: 3000. Conditioning: roll. Cost): 90pF. Drain current: 4.2A. Drain-source protection: yes. Drain-source voltage: 20V. Function: Ultra Low On-Resistance. G-S Protection: no. Gate/source voltage Vgs: 12V. IDss (min): 1uA. Id(imp): 33A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1uA. Polarity: unipolar. Power: 1.25W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Td(off): 54 ns. Td(on): 7.5 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Vgs(th) min.: 0.6V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLML2502
36 parameters
Housing
SOT-23 ( TO-236 )
ID (T=100°C)
3.4A
ID (T=25°C)
4.2A
Idss (max)
25uA
On-resistance Rds On
0.035 Ohms
Housing (according to data sheet)
SOT-23 ( TO-236AB ) ( Micro3 )
Voltage Vds(max)
20V
Assembly/installation
surface-mounted component (SMD)
C(in)
740pF
Channel type
N
Conditioning unit
3000
Conditioning
roll
Cost)
90pF
Drain current
4.2A
Drain-source protection
yes
Drain-source voltage
20V
Function
Ultra Low On-Resistance
G-S Protection
no
Gate/source voltage Vgs
12V
IDss (min)
1uA
Id(imp)
33A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1uA
Polarity
unipolar
Power
1.25W
Properties of semiconductor
Logic Level
Quantity per case
1
RoHS
yes
Td(off)
54 ns
Td(on)
7.5 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
16 ns
Type of transistor
MOSFET
Vgs(th) min.
0.6V
Original product from manufacturer
International Rectifier