N-channel transistor IRLL2705TRPBF, SOT-223, 55V
Quantity
Unit price
1-24
1.79$
25+
1.40$
| Quantity in stock: 3157 |
N-channel transistor IRLL2705TRPBF, SOT-223, 55V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 870pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 3.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 3.8A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: LL2705. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 35 ns. Switch-on time ton [nsec.]: 6.2 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 23:36
IRLL2705TRPBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
870pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
3.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.04 Ohms @ 3.8A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
LL2705
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
35 ns
Switch-on time ton [nsec.]
6.2 ns
Original product from manufacturer
International Rectifier