N-channel transistor IRLL110TRPBF, SOT-223, 100V
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Unit price
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0.76$
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N-channel transistor IRLL110TRPBF, SOT-223, 100V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 250pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.9A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 3.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 16 ns. Switch-on time ton [nsec.]: 9.3 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 21:51
IRLL110TRPBF
15 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
250pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
1.5A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.54 Ohms @ 0.9A
Gate breakdown voltage Ugs [V]
2V
Max temperature
+150°C.
Maximum dissipation Ptot [W]
3.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
16 ns
Switch-on time ton [nsec.]
9.3 ns
Original product from manufacturer
Vishay (ir)