N-channel transistor IRLL014NTRPBF, SOT-223, 55V
Quantity
Unit price
1-99
1.01$
100+
0.79$
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N-channel transistor IRLL014NTRPBF, SOT-223, 55V. Housing: SOT-223. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 55V. Ciss Gate Capacitance [pF]: 230pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.2A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: LL014N. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.1W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 14 ns. Switch-on time ton [nsec.]: 5.1 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 21:51
IRLL014NTRPBF
16 parameters
Housing
SOT-223
Drain-source voltage Uds [V]
55V
Ciss Gate Capacitance [pF]
230pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
2A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.2 Ohms @ 1.2A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
LL014N
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.1W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
14 ns
Switch-on time ton [nsec.]
5.1 ns
Original product from manufacturer
Infineon