N-channel transistor IRLD024PBF, DIP4, 60V. Housing: DIP4. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 870pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 2.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 1.5A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: IRLD024PBF. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 4. RoHS: yes. Switch-off delay tf[nsec.]: 23 ns. Switch-on time ton [nsec.]: 11 ns. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 11/02/2025, 17:57