N-channel transistor IRLD024, 1.8A, 2.5A, 250uA, 0.10 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.8A. ID (T=25°C): 2.5A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 870pF. Channel type: N. Cost): 360pF. Drain-source protection: yes. Function: Fast Switching, Logic-Level Gate Drive. G-S Protection: no. Gate/source voltage Vgs: 10V. IDss (min): 25uA. Id(imp): 20A. Number of terminals: 4. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Various: Dynamic dv/dt Rating. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13