N-channel transistor IRLD014, 1.2A, 1.7A, 0.025mA, 1.7A, 0.20 Ohms, DIP, HVMDIP ( DIP-4 ), 60V. ID (T=100°C): 1.2A. ID (T=25°C): 1.7A. Idss: 0.025mA. Idss (max): 1.7A. On-resistance Rds On: 0.20 Ohms. Housing: DIP. Housing (according to data sheet): HVMDIP ( DIP-4 ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. Channel type: N. Function: td(on) 9.3ns, td(off) 17ns, Logic-Level Gate. Id(imp): 14A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. Quantity per case: 1. RoHS: yes. Technology: HEXFET Power MOSFET. Type of transistor: FET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13