N-channel transistor IRLB8743PBF, TO-220, 100A, 150A, 100uA, 2.5m Ohms, TO-220AB, 30 v

N-channel transistor IRLB8743PBF, TO-220, 100A, 150A, 100uA, 2.5m Ohms, TO-220AB, 30 v

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Unit price
1-4
1.44$
5-24
1.23$
25-49
1.09$
50-99
1.00$
100+
0.86$
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Quantity in stock: 48

N-channel transistor IRLB8743PBF, TO-220, 100A, 150A, 100uA, 2.5m Ohms, TO-220AB, 30 v. Housing: TO-220. ID (T=100°C): 100A. ID (T=25°C): 150A. Idss (max): 100uA. On-resistance Rds On: 2.5m Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 5110pF. Channel type: N. Charge: 36nC. Conditioning: tubus. Cost): 960pF. Drain current: 150A. Drain-source protection: yes. Drain-source voltage: 30V. Function: UPS. DC/DC Converter. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 620A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 140W. Polarity: unipolar. Power: 140W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Spec info: High Frequency Synchronous. Td(off): 25 ns. Td(on): 23 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRLB8743PBF
39 parameters
Housing
TO-220
ID (T=100°C)
100A
ID (T=25°C)
150A
Idss (max)
100uA
On-resistance Rds On
2.5m Ohms
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
30 v
Assembly/installation
PCB through-hole mounting
C(in)
5110pF
Channel type
N
Charge
36nC
Conditioning
tubus
Cost)
960pF
Drain current
150A
Drain-source protection
yes
Drain-source voltage
30V
Function
UPS
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
620A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
140W
Polarity
unipolar
Power
140W
Properties of semiconductor
Logic Level
Quantity per case
1
RoHS
yes
Spec info
High Frequency Synchronous
Td(off)
25 ns
Td(on)
23 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
29 ns
Type of transistor
MOSFET
Vgs(th) max.
2.35V
Vgs(th) min.
1.35V
Original product from manufacturer
International Rectifier