N-channel transistor IRLB1304PTPBF, 130A, 185A, 250uA, 0.004 Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 130A. ID (T=25°C): 185A. Idss (max): 250uA. On-resistance Rds On: 0.004 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. Assembly/installation: PCB through-hole mounting. C(in): 7660pF. Channel type: N. Cost): 2150pF. Drain-source protection: zener diode. Function: Gate control by logic level. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 740A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 300W. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 21 ns. Technology: HEXFET Power MOSFET transistor, logic level controlled. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13