N-channel transistor IRL640SPBF, SMD-220, 200V. Housing: SMD-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. Ciss Gate Capacitance [pF]: 1800pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.18 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: L640S. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 44 ns. Switch-on time ton [nsec.]: 8 ns. Original product from manufacturer: Vishay. Quantity in stock updated on 11/02/2025, 22:52