N-channel transistor IRL640, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V

N-channel transistor IRL640, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V

Quantity
Unit price
1-4
1.74$
5-49
1.43$
50-99
1.28$
100+
1.13$
Equivalence available
Quantity in stock: 26

N-channel transistor IRL640, 11A, 17A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. Channel type: N. Cost): 480pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 10V. IDss (min): 25uA. Id(imp): 68A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRL640
30 parameters
ID (T=100°C)
11A
ID (T=25°C)
17A
Idss (max)
250uA
On-resistance Rds On
0.18 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
1800pF
Channel type
N
Cost)
480pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
10V
IDss (min)
25uA
Id(imp)
68A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
Quantity per case
1
RoHS
yes
Td(off)
44 ns
Td(on)
8 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
310 ns
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier

Equivalent products and/or accessories for IRL640