N-channel transistor IRL540NS, 26A, 36A, 250uA, 0.044 Ohms, D2PAK ( TO-263 ), 100V

N-channel transistor IRL540NS, 26A, 36A, 250uA, 0.044 Ohms, D2PAK ( TO-263 ), 100V

Quantity
Unit price
1-4
1.89$
5-24
1.67$
25-49
1.50$
50-99
1.35$
100+
1.18$
Quantity in stock: 779

N-channel transistor IRL540NS, 26A, 36A, 250uA, 0.044 Ohms, D2PAK ( TO-263 ), 100V. ID (T=100°C): 26A. ID (T=25°C): 36A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 1800pF. Channel type: N. Cost): 350pF. Drain-source protection: yes. Function: Gate control by logic level. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 60.4k Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 140W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:13

Technical documentation (PDF)
IRL540NS
26 parameters
ID (T=100°C)
26A
ID (T=25°C)
36A
Idss (max)
250uA
On-resistance Rds On
0.044 Ohms
Housing
D2PAK ( TO-263 )
Voltage Vds(max)
100V
C(in)
1800pF
Channel type
N
Cost)
350pF
Drain-source protection
yes
Function
Gate control by logic level
G-S Protection
no
Gate/source voltage Vgs
16V
IDss (min)
25uA
Id(imp)
60.4k Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
140W
Quantity per case
1
RoHS
yes
Td(off)
39 ns
Td(on)
11 ns
Technology
HEXFET® Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
Infineon Technologies