N-channel transistor IRL540NPBF, TO220AB, 100V, 100V, 0.044 Ohms, 100V. Housing: TO220AB. Vdss (Drain to Source Voltage): 100V. Drain-source voltage (Vds): 100V. Housing (JEDEC standard): -. On-resistance Rds On: 0.044 Ohms. Drain-source voltage Uds [V]: 100V. Assembly/installation: THT. Channel type: N. Charge: 49.3nC. Ciss Gate Capacitance [pF]: 1800pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Control: Logic-Level. Drain current Id (A) @ 25°C: 36A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.044 Ohms @ 18A. Drain current: 36A. Drain-source voltage: 100V. Features: -. Gate breakdown voltage Ugs [V]: 2V. Gate-source voltage: 16V, ±16V. Gate/source voltage Vgs max: -16V. Housing thermal resistance: 1.1K/W. Id @ Tc=25°C (Continuous Drain Current): 36A. Information: -. MSL: -. Manufacturer's marking: IRL540N. Max drain current: 36A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 140W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. Polarity: unipolar. Power: 140W. Properties of semiconductor: Logic Level. RoHS: yes. Series: HEXFET. Switch-off delay tf[nsec.]: 39 ns. Switch-on time ton [nsec.]: 11 ns. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET, logic level. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/02/2025, 22:25