N-channel transistor IRL530NSTRLPBF, D²-PAK, TO-263, 100V
Quantity
Unit price
1-99
2.53$
100+
1.87$
| Quantity in stock: 126 |
N-channel transistor IRL530NSTRLPBF, D²-PAK, TO-263, 100V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 100V. Ciss Gate Capacitance [pF]: 800 ns. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 1.3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 2V. Manufacturer's marking: L530NS. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 1.3W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 7.2 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 11/06/2025, 09:45
IRL530NSTRLPBF
17 parameters
Housing
D²-PAK
Housing (JEDEC standard)
TO-263
Drain-source voltage Uds [V]
100V
Ciss Gate Capacitance [pF]
800 ns
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
1.3A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.1 Ohms @ 9A
Gate breakdown voltage Ugs [V]
2V
Manufacturer's marking
L530NS
Max temperature
+175°C.
Maximum dissipation Ptot [W]
1.3W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
30 ns
Switch-on time ton [nsec.]
7.2 ns
Original product from manufacturer
Infineon