N-channel transistor IRL530NPBF, TO-220AB, 100V, 0.10 Ohms, 100V. Housing: TO-220AB. Drain-source voltage (Vds): 100V. Housing (JEDEC standard): -. On-resistance Rds On: 0.10 Ohms. Drain-source voltage Uds [V]: 100V. Assembly/installation: THT. Channel type: N. Charge: 22.7nC. Ciss Gate Capacitance [pF]: 800 ns. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Control: Logic-Level. Drain current Id (A) @ 25°C: 17A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 9A. Drain current: 17A. Drain-source voltage: 100V. Gate breakdown voltage Ugs [V]: 2V. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 1.9K/W. Manufacturer's marking: IRL530NPBF. Max drain current: 17A. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 79W. Number of terminals: 3. On-state resistance: 100M Ohms. Polarity: unipolar. Power: 79W. Properties of semiconductor: Logic Level. RoHS: yes. Switch-off delay tf[nsec.]: 30 ns. Switch-on time ton [nsec.]: 7.2 ns. Technology: HEXFET®. Type of transistor: N-MOSFET, HEXFET, logic level. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45