N-channel transistor IRL530N, 12A, 17A, 250uA, 0.10 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 800pF. Channel type: N. Cost): 160pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 60A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 79W. Quantity per case: 1. RoHS: yes. Spec info: Gate control by logic level. Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET transistor, logic level controlled. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45