N-channel transistor IRL3705N, TO-220, 63A, 89A, 250uA, 0.01 Ohms, TO-220AB, 55V

N-channel transistor IRL3705N, TO-220, 63A, 89A, 250uA, 0.01 Ohms, TO-220AB, 55V

Quantity
Unit price
1-4
3.06$
5-24
2.75$
25-49
2.50$
50-99
2.30$
100+
1.96$
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Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 8

N-channel transistor IRL3705N, TO-220, 63A, 89A, 250uA, 0.01 Ohms, TO-220AB, 55V. Housing: TO-220. ID (T=100°C): 63A. ID (T=25°C): 89A. Idss (max): 250uA. On-resistance Rds On: 0.01 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 3600pF. Channel type: N. Charge: 65.3nC. Conditioning unit: 50. Conditioning: tubus. Cost): 870pF. Drain current: 89A. Drain-source protection: yes. Drain-source voltage: 55V. Function: Logic-Level Gate Drive, Fast Switching. G-S Protection: no. Gate-source voltage: 16V, ±16V. Gate/emitter voltage VGE(th)max.: 2V. Gate/source voltage Vgs: 16V. Housing thermal resistance: 1.2K/W. IDss (min): 25uA. Id(imp): 310A. Number of terminals: 3. On-state resistance: 10M Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 170W. Polarity: unipolar. Power: 130W. Properties of semiconductor: Logic Level. Quantity per case: 1. RoHS: yes. Td(off): 37 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 94us. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRL3705N
41 parameters
Housing
TO-220
ID (T=100°C)
63A
ID (T=25°C)
89A
Idss (max)
250uA
On-resistance Rds On
0.01 Ohms
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
3600pF
Channel type
N
Charge
65.3nC
Conditioning unit
50
Conditioning
tubus
Cost)
870pF
Drain current
89A
Drain-source protection
yes
Drain-source voltage
55V
Function
Logic-Level Gate Drive, Fast Switching
G-S Protection
no
Gate-source voltage
16V, ±16V
Gate/emitter voltage VGE(th)max.
2V
Gate/source voltage Vgs
16V
Housing thermal resistance
1.2K/W
IDss (min)
25uA
Id(imp)
310A
Number of terminals
3
On-state resistance
10M Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
170W
Polarity
unipolar
Power
130W
Properties of semiconductor
Logic Level
Quantity per case
1
RoHS
yes
Td(off)
37 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
94us
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier