N-channel transistor IRL2910, 39A, 55A, 250uA, 0.026 Ohms, TO-220, TO-220AB, 100V

N-channel transistor IRL2910, 39A, 55A, 250uA, 0.026 Ohms, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
2.90$
5-24
2.55$
25-49
2.26$
50-99
2.05$
100+
1.75$
Quantity in stock: 9

N-channel transistor IRL2910, 39A, 55A, 250uA, 0.026 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 250uA. On-resistance Rds On: 0.026 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 3700pF. Channel type: N. Cost): 630pF. Function: Logic Level. Gate/source voltage Vgs: 16V. IDss (min): 10uA. Id(imp): 190A. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. Td(off): 49 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRL2910
25 parameters
ID (T=100°C)
39A
ID (T=25°C)
55A
Idss (max)
250uA
On-resistance Rds On
0.026 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
3700pF
Channel type
N
Cost)
630pF
Function
Logic Level
Gate/source voltage Vgs
16V
IDss (min)
10uA
Id(imp)
190A
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
200W
Quantity per case
1
Td(off)
49 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Type of transistor
MOSFET
Vgs(th) max.
2V
Vgs(th) min.
1V
Original product from manufacturer
International Rectifier