N-channel transistor IRL2203N, 60A, 116A, 250uA, 0.07 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 60A. ID (T=25°C): 116A. Idss (max): 250uA. On-resistance Rds On: 0.07 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 3290pF. Channel type: N. Cost): 1270pF. Drain-source protection: zener diode. Function: Fast Switching, Dynamic dv/dt Rating. G-S Protection: no. Gate/source voltage Vgs: 16V. IDss (min): 25uA. Id(imp): 400A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 180W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 11 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 56 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45