N-channel transistor IRL1404ZS, 140A, 200A, 20uA, 200A, 2.5m Ohms, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 40V

N-channel transistor IRL1404ZS, 140A, 200A, 20uA, 200A, 2.5m Ohms, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 40V

Quantity
Unit price
1-4
3.10$
5-24
2.78$
25-49
2.51$
50-99
2.30$
100+
2.00$
Quantity in stock: 69

N-channel transistor IRL1404ZS, 140A, 200A, 20uA, 200A, 2.5m Ohms, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 40V. ID (T=100°C): 140A. ID (T=25°C): 200A. Idss: 20uA. Idss (max): 200A. On-resistance Rds On: 2.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 40V. Assembly/installation: surface-mounted component (SMD). C(in): 5080pF. Channel type: N. Cost): 970pF. Drain-source protection: diode. Function: High-speed switching. G-S Protection: no. Id(imp): 790A. Pd (Power Dissipation, Max): 230W. Quantity per case: 1. Td(off): 30 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRL1404ZS
24 parameters
ID (T=100°C)
140A
ID (T=25°C)
200A
Idss
20uA
Idss (max)
200A
On-resistance Rds On
2.5m Ohms
Housing
D2PAK ( TO-263 )
Housing (according to data sheet)
TO-263 ( D2PAK )
Voltage Vds(max)
40V
Assembly/installation
surface-mounted component (SMD)
C(in)
5080pF
Channel type
N
Cost)
970pF
Drain-source protection
diode
Function
High-speed switching
G-S Protection
no
Id(imp)
790A
Pd (Power Dissipation, Max)
230W
Quantity per case
1
Td(off)
30 ns
Td(on)
19 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
26 ns
Type of transistor
MOSFET
Original product from manufacturer
International Rectifier