N-channel transistor IRGB15B60KD, 15A, TO-220, TO-220AC, 600V

N-channel transistor IRGB15B60KD, 15A, TO-220, TO-220AC, 600V

Quantity
Unit price
1-4
6.31$
5-9
5.74$
10-24
4.87$
25+
4.41$
Quantity in stock: 48

N-channel transistor IRGB15B60KD, 15A, TO-220, TO-220AC, 600V. Ic(T=100°C): 15A. Housing: TO-220. Housing (according to data sheet): TO-220AC. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 850pF. CE diode: yes. Channel type: N. Collector current: 31A. Conditioning unit: 50. Conditioning: plastic tube. Cost): 75pF. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 62A. Maximum saturation voltage VCE(sat): 2.2V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 208W. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Spec info: Ultrafast Soft Recovery Diode. Td(off): 184 ns. Td(on): 34 ns. Trr Diode (Min.): 92 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
IRGB15B60KD
28 parameters
Ic(T=100°C)
15A
Housing
TO-220
Housing (according to data sheet)
TO-220AC
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
850pF
CE diode
yes
Channel type
N
Collector current
31A
Conditioning unit
50
Conditioning
plastic tube
Cost)
75pF
Gate/emitter voltage VGE(th) min.
3.5V
Gate/emitter voltage VGE(th)max.
5.5V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
62A
Maximum saturation voltage VCE(sat)
2.2V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
208W
RoHS
yes
Saturation voltage VCE(sat)
1.5V
Spec info
Ultrafast Soft Recovery Diode
Td(off)
184 ns
Td(on)
34 ns
Trr Diode (Min.)
92 ns
Original product from manufacturer
International Rectifier