N-channel transistor IRG4PH50U, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1200V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1200V. Assembly/installation: PCB through-hole mounting. C(in): 3600pF. CE diode: no. Channel type: N. Collector current: 45A. Conditioning unit: 25. Conditioning: plastic tube. Cost): 160pF. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 180A (pulsed). Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 180A. Marking on the case: IRG4PH50U. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 2.56V. Spec info: td(on) 35ns, td(off) 200ns, TJ=25°C. Td(off): 200 ns. Td(on): 35 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45