N-channel transistor IRG4PH50KD, 24A, TO-247, TO-247 ( AC ) MOS-N-IGBT, 1220V. Ic(T=100°C): 24A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Collector/emitter voltage Vceo: 1220V. Assembly/installation: PCB through-hole mounting. C(in): 2800pF. CE diode: yes. Channel type: N. Collector current: 45A. Conditioning unit: 25. Conditioning: plastic tube. Cost): 140pF. Function: Ic 45A @ 25°C, 24A @ 110°C, Icm 90A (pulsed). Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 90A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 2.77V. Td(off): 140 ns. Td(on): 87 ns. Trr Diode (Min.): 90 ns. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 09:45